Er, B.Bavtar, G.Kivanc, O.C.2025-07-152025-07-152025979833151517110.1109/CPE-POWERENG63314.2025.110272492-s2.0-105009409494https://doi.org/10.1109/CPE-POWERENG63314.2025.11027249https://hdl.handle.net/20.500.14517/8101Altera; EPRA Energy; et al.; IEEE Industrial Electronics Society (IES); IPEM Technologies; OPAL-RT TechnologiesThis paper presents the design and implementation of a high-power-density GaN-based USB-PD charger capable of delivering up to 100 W. Gallium Nitride (GaN) power devices offer significant advantages over traditional silicon-based components, including higher efficiency, reduced switching losses, and increased power density, making them an ideal choice for modern fast-charging applications. In this study, various power conversion topologies and commercially available GaN-based integrated circuits (ICs) are analyzed and compared to determine the most efficient and thermally optimized solution. Extensive thermal analysis is performed to evaluate the heat dissipation and efficiency of the system under full-load conditions. Experimental tests verified the charger's performance, demonstrating high efficiency and superior thermal management compared to conventional silicon-based solutions. The results highlight the potential of GaN technology in achieving compact, efficient, and high-power-density USB-PD chargers suitable for next-generation consumer electronics. © 2025 IEEE.eninfo:eu-repo/semantics/closedAccessAutomotiveGaNThermal AnalysisUSB-PD ChargerConference ObjectN/AN/A